0.18um AB s-BCD G1 (7V-24V)
Overview
公司提供的0.18um Analog BCD体硅(非外延)工艺,,,,,拥有性能卓越的LDMOS/DECMOS体现以及精简的光刻条理,,,,,为DC-DC Convertor、电源治理IC、手机背光驱动、快充等应用提供了很好的解决计划。。。。。。
Key Features
- Non-EPI process,,,,,cost effective mask layer,,,,,competitive Rdson and BVdss performance
- Foundry compatible 5V CMOS,,,,,NLDMOS & PLDMOS up to 24V
- Complementary Drain Extended CMOS (DECMOS) up to 40V operation
- Rich options included parasitic Zener/JFET/Schottky
- MIM Capacitor, High-Sheet Poly Resistor, E -fuse available
- PDK and industry standard CAD tools are supported
- Supporting Thick metal layer &Small pad opening for RDL
Application
-DC-DC Convertor
-PMICs
-LED lighting driver
-Backlight circuit applications
----------------------------------------------------------------------------------------------------------------------------
0.18μm DB BCD G2S (7V-80V)
Overview
公司提供的0.18μm DB s-BCD G2S工艺平台提供了低导通电阻、高可靠性的LDMOS以及7V-80V宽事情电压器件可供选择。。。。。。别的,,,,,平台还提供了BJT、Poly电阻、Zener、SBD等种类富厚的寄生器件,,,,,以及针对差别事情电压的ESD;;;;;;;;ぜ苹,,,,,为电源治理IC的设计提供了有竞争力的工艺计划。。。。。。
Key Features
- Low Voltage 1.8V/5V CMOS
- High Voltage 7V-80V
- Switch and analog nLDMOS (7-80V), Full isolated nLDMOS (7-40V)
- Low Rdson pLDMOS (9-50V)
- Rich options: Zener &BJT&SBD
- 1.8V&5V standard cell library
- 5V FT e-Fuse
- 5V MTP
Application
- Motor Driver
- AC-DC/DC-DC Convertor
- PMICs
----------------------------------------------------------------------------------------------------------------------------
0.18μm DB BCD G2S (80V-120V)
Overview
公司提供的0.18μm DB s-BCD G2S(80-120V)工艺平台提供了80V-120V的高事情电压器件可供选择。。。。。。别的,,,,,平台还提供了BJT、Poly电阻、Zener、120V JFET等种类富厚的器件,,,,,以及针对差别事情电压的ESD;;;;;;;;ぜ苹,,,,,为电源治理IC的设计提供了有竞争力的工艺计划。。。。。。
Key Features
- Low Voltage 5V CMOS
- High Voltage 80V-120V DEMOS & 100V LDNMOS
- 15V Fully ISO DE NMOS
- Rich options: Zener &BJT&JFET
- 5V standard cell library
- 5V FT e-Fuse
Application
- BMS
- AC-DC Convertor
----------------------------------------------------------------------------------------------------------------------------
0.18μm DB BCD G3 (7V-40V)
Overview
公司第三代0.18微米BCD工艺平台提供了低导通电阻、高可靠性的LDMOS以及精简的光刻条理,,,,,可笼罩7V-40V的宽事情电压规模。。。。。。别的,,,,,平台还提供了BJT、Poly电阻、Zener、SBD等种类富厚的寄生器件,,,,,以及针对差别事情电压的ESD;;;;;;;;ぜ苹,,,,,为电源治理IC的设计提供了有竞争力的工艺计划。。。。。。
Key Features
- Low Voltage 5V CMOS
- High Voltage 23V/35V/45V DE-CMOS
- Switch and analog NLDMOS (7-40V), full isolated NLDMOS (7-24V)
- Low Rdson PLDMOS (7-40V)
- Rich options: Zener &BJT&SBD
- 5V standard cell library
- 5V e-Fuse/FT e-Fuse
- 5V MTP (psub-iso)
Application
- Motor Driver
- AC-DC/DC-DC Convertor
- OVP
- PMICs